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Search: "[ keyword: Gallium nitride ]" (8)
Estimation of switching losses considering non‑linear parasitic capacitances of GaN E‑HEMT
Inwon Lee  Dongkwan Yoon  Younghoon Cho
Vol. 23, No. 8, pp. 1243-1251, Aug. 2023
10.1007/s43236-023-00653-9
Review of wide band‑gap technology: power device, gate driver, and converter design
Krishna Ravinchandra  Tan Kheng Suan Freddy  June-Seok Lee  Kyo-Beum Lee  Homer Alan Mantooth 
Vinesh Thiruchelvam  Jerome Ignatius Yuen Yi Xian
Vol. 22, No. 8, pp. 1398-1413, Aug. 2022
10.1007/s43236-022-00470-6
LLC resonant DC‑to‑DC power converter with synchronous rectifiers using high‑ and medium‑voltage gallium nitride‑based transistors
Jinhaeng Jang
Vol. 22, No. 8, pp. 1279-1289, Aug. 2022
10.1007/s43236-022-00486-y
600 V p‑type gate‑doped enhancement mode gallium nitride‑based transistors for AC‑to‑DC power factor‑corrected rectifiers operating at 200 kHz
Jinhaeng Jang
Vol. 22, No. 7, pp. 1219-1230, Jul. 2022
10.1007/s43236-022-00461-7
Channel current analysis of GaN HEMTs with source sense pin in DC/DC boost converters
Buket Turan Azizoglu  Abdul Balikci  Eyup Akpinar  Enes Durbaba
Vol. 21, No. 4, pp. 713-723, Apr. 2021
10.1007/s43236-020-00215-3
Performance evaluation of GaN FET-based matrix converters with dv/dt filters for variable frequency drive applications
Taeyeong Lee  Hokyeong Kim  Nayoung Lee  Taehoon Chin  Hanyoung Bu 
Younghoon Cho
Vol. 20, No. 3, pp. 844-853, May  2020
10.1007/s43236-020-00070-2
Performance Evaluation of GaN-Based Synchronous Boost Converter under Various Output Voltage, Load Current, and Switching Frequency Operations
Di Han  Bulent Sarlioglu
Vol. 15, No. 6, pp. 1489-1498, Nov. 2015
10.6113/JPE.2015.15.6.1489
Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications
Nor Zaihar Yahaya  Mumtaj Begam Kassim Raethar  Mohammad Awan
Vol. 9, No. 1, pp. 36-42, Jan. 2009
10.6113/JPE.2009.9.1.36

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  ISSN : 1598 - 2092
eISSN : 2093 - 4718